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William R. Frensley

ECSN 3.928
The University of Texas at Dallas
800 West Campbell Road
Richardson, TX 75080, USA
Phone: 972-883-2412
Mailstop: EC33

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William R. Frensley



B.S., Physics, California Institute of Technology, 1973
Ph.D., Physics, University of Colorado, 1976


Dr. Frensley's Ph.D. research with Herbert Kroemer produced the first microscopic theory of semiconductor heterojunctions, structures which are today essential elements of many electronic and opto-electronic devices. After one year as a postdoctoral researcher at the University of California at Santa Barbara, He joined the Central Research Laboratories of Texas Instruments, Inc. At TI he worked on high-frequency semiconductor devices and participated in some of the first attempts to build nanoelectonic devices employing quantum-mechanical principles.

He is a Fellow of the IEEE (Electron Devices Society), and is a member of the American Physical Society.

Research Interests

Semiconductor devices, Device simulation, Heterostructures, Quantum transport theory, Nanoelectronics.