1978 PhD Physics, University of California, Santa Barbara
Massimo (Max) V. Fischetti received the Ph.D. degree in Physics from the University of California, Santa Barbara, in 1978. From 1979 till 1981 he was a Scientist in the Physics group of ST-Microelectronics, Italy, conducting experimental work on the hot-electron degradation of silicon dioxide. From 1983 till 2005 he was a Research Staff Member at the IBM T. J. Watson Research Center in Yorktown Heights, New York, working on the theory of electron transport in semiconductors and insulators, on Monte Carlo simulation of semiconductor devices, and on quantum transport in small electron devices. From 2005 till 2010 he was full professor in the Electrical and Computer Engineering Department at the University of Massachusetts-Amherst. In 2010 he became Texas Instruments Professor in Nanoelectronics in the Materials Science and Engineering Department at the University of Texas at Dallas. Since joining UT-Dallas, professor Fischetti has continued his work on the theory of electronic transport in semiconductors exploring the limits of device scaling and extended the study of two-dimensional materials. Prof. Fischetti is a Fellow of the American Physical Society and was a co-recipient of the 2011 IEEE Cledo Brunetti Award for his work on the physics of electron transport in solids.